IX4351NE: 9A Low-Side SiC MOSFET & IGBT Gate Driver. Product Catalog! Legal Disclaimer. Silicon carbide - The latest breakthrough in high-voltage switching and rectification. ST’s portfolio of silicon carbide devices incluses STPOWER SiC MOSFETs ranging from 650 to 1700 V with the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and STPOWER SiC diodes ranging from 600 to 1200 V which feature negligible switching losses.

22-03-2021 | UnitedSiC | Test & Measurement

UnitedSiC launched the FET-Jet Calculator, a simple, registration-free online tool that helps selection and performance comparison in various power applications and topologies. This new tool enables engineers to make design decisions swiftly and with confidence.

Todoist gmail app. To identify the optimal device for their power design, users pick their application function and topology, insert their design parameter details, and the tool calculates switch current, efficiency, and losses automatically, categorised by conduction, turn-on, and turn-off contributions. Operating temperature and heatsink rating are incorporated as inputs to display expected operating junction temperatures.

Users can examine the impact of changing conduction modes in the different topologies by modifying storage inductor and switching frequency values. Furthermore, single or paralleled devices can be picked to show the relative overall performance of devices with different current ratings.

The tool alerts the user if a selection is not suitable, such as when voltage rating is insufficient for the conditions and topology chosen, assisting the user to quickly arrive at a viable solution.

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Anup Bhalla, VP Engineering at UnitedSiC, comments: “Selecting the right device in the right power topology shouldn’t be a barrier to power designers considering the switch to SiC.  Download program pclp gratis. Emo gurram egaravachu full movie download. This is why we built the FET-Jet Calculator. For engineers working with SiC for the first time, or those looking for the best SiC device to fit evolving designs, the calculator is a quick and easy way to evaluate UnitedSiC FETs in a variety of power topologies - speeding up R&D by avoiding any wasted time creating advanced simulations for inappropriate devices. Just a few clicks put you on the right heading to arrive at an optimum design.”